Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuit
- 1 June 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (6) , 614-617
- https://doi.org/10.1109/68.141986
Abstract
The authors experimentally demonstrate the operation of a fully integrated optoelectronic circuit with optical input and output consisting of a p-i-n photodetector and load resistor, a depletion-mode GaAs-Al/sub x/Ga/sub 1-x/As heterostructure field-effect transistor (HFET) and self-biased HFET load, together with an output GaAs-Al/sub x/Ga/sub 1-x/As multiple quantum-well optical modulator. All elements have been monolithically integrated within a 50- mu m*50- mu m area. A low optical power input causes a modulation of a higher-power output, demonstrating optical signal amplification.This publication has 6 references indexed in Scilit:
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