Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect
- 1 April 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 46 (1-3) , 218-222
- https://doi.org/10.1016/s0921-5107(96)01982-4
Abstract
No abstract availableKeywords
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