Band-gap narrowing in GaAs using a capacitance method

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Abstract
Since the precise value of band-gap narrowing is difficult to determine, many values have been reported in the literature. Optical methods have been considered to yield the most accurate values. Here we present the results of capacitance measurements on abrupt GaAs diodes carried out at various temperatures. The value of band-gap narrowing is derived with use of a new formalism. The agreement between the values of band-gap narrowing obtained by this method and by optical methods is good, demonstrating the validity of the applied theory. In contrast with other electrical measurements, this method does not require the knowledge of material parameters such as mobility, lifetime, and diffusion constants, which are difficult to estimate.