HALL-EFFECT MEASUREMENTS ON INDIUM-IMPLANTED SILICON
- 1 July 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (1) , 18-20
- https://doi.org/10.1063/1.1653235
Abstract
Ion implantation of indium in silicon has been studied at 30 keV both in random and in channeling conditions. Implantations were performed at room temperature with doses ranging from 1×1012 to 1×1015 ions/cm2; surface carrier concentration versus anneal temperature curves were obtained and compared with the behavior of other group III elements. The anneal behavior of the above‐mentioned implants after anneal at 700°C and subsequent tin implantation is also discussed.Keywords
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