Temperature Dependence of Recombination Lifetime in Gallium Arsenide Electroluminescent Diodes

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Abstract
The temperature dependence of the radiative recombination lifetime, current dependence of the externally radiated light output, and the photon energy of the radiated light in gallium arsenide electroluminescent diodes were investigated in the temperature range from 345°K to 77°K. The radiative recombination lifetime was derived by using the Shockley-Read statistics. Experimental results were analysed by this model and it was concluded that the radiative recombination in our samples was caused by the transition process of the free electron to shallow-acceptor. This mechanism was confirmed from the current dependence of the externally radiated light output, as well as from the photon energy of the light output. The shallow-acceptor level in the gallium arsenide diode was determined to be E v +0.053 eV, as measured by the temperature dependence of the radiative recombination lifetime, and also from the temperature dependence of the externally radiated light output. The photon energy measurements led to a value E v +0.056 eV.