Critical thickness determination of InAs, InP and GaP on GaAs by X-ray interference effect and transmission electron microscopy

This publication has 6 references indexed in Scilit:

• Reflection high-energy electron diffraction and optical measurements on the molecular-beam epitaxial growth of one and two monolayers of InAs on GaAs
  Journal of Applied Physics, 1992
• Strain induced 2D–3D growth mode transition in molecular beam epitaxy of InxGa1t-xAs on GaAs (001)
  Journal of Crystal Growth, 1991
• Atomic layer molecular beam epitaxy (Almbe) of III?V compounds: Growth modes and applications
  Applied Physics A, 1989
• X-ray interference in ultrathin epitaxial layers: A versatile method for the structural analysis of single quantum wells and heterointerfaces
  Physical Review B, 1989
• Atomic layer molecular beam epitaxy growth of InAs on GaAs substrates
  Applied Physics A, 1989
• One-dimensional dislocations. I. Static theory
  Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949