1/f noise in n-p-n GaAs/AlGaAs heterojunction bipolar transistors:iImpact of intrinsic transistor and parasitic series resistances
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (6) , 1148-1153
- https://doi.org/10.1109/16.214742
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- A low-noise Ku-band AlGaAs/GaAs HBT oscillatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Location of low-frequency noise sources in submicrometer bipolar transistorsIEEE Transactions on Electron Devices, 1992
- DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors at room temperature and low temperaturesIEEE Transactions on Microwave Theory and Techniques, 1991
- Reduction of low-frequency noise in n-p-n AlGaAs/GaAs HBT'sIEEE Transactions on Electron Devices, 1991
- Transport and noise in GaAs/AlGaAs heterojunction bipolar transistors. II. Noise and gain at low frequenciesIEEE Transactions on Electron Devices, 1989
- GaAs FET's with a flicker-noise corner below 1 MHzIEEE Transactions on Electron Devices, 1987