Transition from direct to indirect band structure induced by the AlSb layer inserted in the GaSb/AlSb quantum well
- 15 August 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 58 (7) , 3594-3596
- https://doi.org/10.1103/physrevb.58.3594
Abstract
A 6.5-nm coupled double GaSb/AlSb quantum well separated by 1, 2, 3 or 4 monolayers AlSb has been investigated by photoluminescence spectroscopy at a temperature of 2 K. When the AlSb layer thickness is more than 1 monolayer (ML), this system changes from direct to indirect energy-band structure, which is well described by a model based on a finite potential well and transmission probability.Keywords
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