Resonant tunneling in AlSb-GaSb-AlSb and AlSb-InGaSb-AlSb double barrier heterostructures
- 18 April 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (16) , 2127-2129
- https://doi.org/10.1063/1.111705
Abstract
We report the resonant tunneling of electrons in AlSb-GaSb-AlSb and AlSb-InGaSb-AlSb double barrier heterostructures grown on different substrate orientations. We have investigated the dependence of the current voltage characteristic on barrier and well thicknesses, as well as on temperature. Resonant tunneling peak to valley (P/V) ratios of 7.6 (GaSb well) and 8.7 (InGaSb well) at 80 K have been obtained. We also report the observation of a second negative differential resistance (NDR) region with an anomalous temperature dependence, and give an experimental estimation of the band alignment in the strained GaSb/InGaSb system based on the variation of the NDR position in the tunneling structures.Keywords
This publication has 11 references indexed in Scilit:
- Piezoelectric-induced current asymmetry in [111] InGaAs/InAlAs resonant tunneling diodes for microwave mixingApplied Physics Letters, 1993
- p-channel modulation-doped field-effect transistors based on AlSb/sub 0.9/As/sub 0.1//GaSbIEEE Electron Device Letters, 1990
- Interband tunneling in polytype GaSb/AlSb/InAs heterostructuresApplied Physics Letters, 1989
- New negative differential resistance device based on resonant interband tunnelingApplied Physics Letters, 1989
- Resonant tunneling of holes in AlSb/GaSb/AlSb double-barrier heterostructuresApplied Physics Letters, 1989
- Resonant tunneling in AlSb/InAs/AlSb double-barrier heterostructuresApplied Physics Letters, 1988
- Heterojunction bipolar transistor utilising AlGaSb/GaSb alloy systemElectronics Letters, 1988
- Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperatureApplied Physics Letters, 1988
- Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applicationsIEEE Journal of Quantum Electronics, 1986
- Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structuresApplied Physics Letters, 1986