Resonant tunneling of holes in AlSb/GaSb/AlSb double-barrier heterostructures
- 14 August 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (7) , 694-695
- https://doi.org/10.1063/1.101801
Abstract
We have made the first observations of resonant tunneling in the AlSb/GaSb material system. Double‐barrier p‐type heterostructures exhibit two distinct features in their current‐voltage characteristics, indicating resonant tunneling via confined valence‐band states. The measured energy level positions are consistent with a substantial valence‐band offset of approximately 0.4 eV.Keywords
This publication has 17 references indexed in Scilit:
- Resonant tunneling in AlSb/InAs/AlSb double-barrier heterostructuresApplied Physics Letters, 1988
- Large room-temperature effects from resonant tunneling through AlAs barriersApplied Physics Letters, 1986
- Resonant tunneling of holes in AlAs-GaAs-AlAs heterostructuresApplied Physics Letters, 1985
- Summary Abstract: Resonant tunneling of holes in quantum well heterostructuresJournal of Vacuum Science & Technology B, 1985
- Optical properties in modulation-doped GaAs-As quantum wellsPhysical Review B, 1985
- Effective masses of holes at GaAs-AlGaAs heterojunctionsPhysical Review B, 1985
- Calculation of hole subbands at the GaAs-interfacePhysical Review B, 1984
- Modification of optical properties of GaAs-Ga1−xAlxAs superlattices due to band mixingApplied Physics Letters, 1983
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974
- Tunneling in a finite superlatticeApplied Physics Letters, 1973