Optical properties in modulation-doped GaAs-Ga1−xAlxAs quantum wells

Optical properties of modulation-doped GaAs-${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$ ${\mathrm{Al}}_{\mathrm{x}}$As semiconductor quantum wells are studied with the use of a multiband effective-mass theory. We consider the case where ${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$ ${\mathrm{Al}}_{\mathrm{x}}$As is doped with acceptors and the first GaAs valence band is populated with holes. Significant mixing of light- and heavy-hole states at points away from the zone center gives rise to interesting optical properties.