Doped microcrystalline silicon growth by high frequency plasmas
- 31 January 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (5) , 616-618
- https://doi.org/10.1063/1.111067
Abstract
The growth of boron- and phosphorus-doped microcrystalline silicon films on glass using plasma enhanced chemical vapor deposition at high rf frequencies was examined for substrate temperatures from room temperature to 400 °C. Microcrystalline growth was obtained by heavy hydrogen dilution of silane with phosphine or trimethylboron as the doping gas. A maximum conductivity of 8 (Ω cm)−1 was obtained at a substrate temperature of 180 °C for p-type films and 74 (Ω cm)−1 at 210 °C for n-type films.Keywords
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