Dopant-enhanced low-temperature epitaxial growth of in situ doped silicon by rapid thermal processing chemical vapor deposition
- 7 January 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (1) , 80-82
- https://doi.org/10.1063/1.104452
Abstract
We have demonstrated, for the first time, that the epitaxial growth temperature can be lowered by dopant incorporation using rapid thermal processing chemical vapor deposition. Heavily arsenic-doped epitaxial layers with very abrupt dopant transition profiles and relatively uniform carrier distributions have been achieved at 800 °C. In addition, it is found that defect formation is closely related to dopant concentration.Keywords
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