Deep levels in GaP
- 1 February 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (2) , 832-836
- https://doi.org/10.1063/1.1662267
Abstract
Change of the junction capacitance under the illumination of monochromatic radiation has been observed in GaP n+p junctions. The peaks were observed at 1.8 and 2.4 eV at 77°K. The 1.8 eV peak was attributed to the hole activation from Fe3+ to the valence band. The photoconductivity spectrum and the transient phenomenon of the photoconductivity in p+n junctions and in high‐resistivity n‐type bulk crystals also showed the presence of the 1.8 eV level due to Fe.This publication has 10 references indexed in Scilit:
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