Atomic Layer Epitaxy of AlAs Using Dimethylaluminumhydride/Trimethylaluminum Mixture as the Al Source
- 1 March 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (3B) , L428-430
- https://doi.org/10.1143/jjap.30.l428
Abstract
The growth of AlAs epitaxial layers was studied by using a mixture of dimethylaluminumhydride (DMAlH)/trimethylaluminum (TMAl) and arsine in a four step gas injection sequence which involves two steps of hydrogen purge separating DMAlH/TMAl and arsine at different pulse durations of the DMAlH/TMAl flow and at temperatures ranging from 250°C to 650°C. One- and two-monolayer self-limiting growths of AlAs were achieved depending on pulse duration of DMAlH/TMAl flow and growth temperature.Keywords
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