Observation of radiative surface states on InP
- 1 March 1987
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (5) , 2072-2074
- https://doi.org/10.1063/1.338009
Abstract
We have observed radiative surface recombination centers on InP by low-temperature photoluminescence. The luminescence band is observed only after etched or annealed surfaces are treated with hydrofluoric acid (HF), and is not found after rinsing in deionized water. These observations and x-ray photoemission studies of the treated surfaces indicate that the recombination centers are related to the near-surface stoichiometry or to the composition of native oxide layers. The peak energy of the transition has been studied as a function of excitation power and is found to increase from 1.392 eV at low power densities to 1.404 eV and higher power densities.This publication has 13 references indexed in Scilit:
- Unpinned (100) GaAs surfaces in air using photochemistryApplied Physics Letters, 1986
- Photoluminescence identification of the C and Be acceptor levels in InPJournal of Electronic Materials, 1984
- Surface fermi level of III–V compound semiconductor-dielectric interfacesSurface Science, 1983
- Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPEJournal of Electronic Materials, 1983
- Annealing encapsulants for InP II: Photoluminescence studiesThin Solid Films, 1982
- Photoluminescence studies of surface damage states in InPSurface Science, 1981
- Influence of the surface on photoluminescence from indium phosphide crystalsJournal of Vacuum Science and Technology, 1980
- Evidence for low surface recombination velocity on n-type InPApplied Physics Letters, 1977
- Free and bound electron transitions to acceptors in indium phosphideSolid State Communications, 1972
- Radiative Lifetimes of Donor-Acceptor Pairs in-Type Gallium ArsenidePhysical Review B, 1969