Channeling in GaAs. A Monte Carlo Simulation of low Energy Implants
- 16 December 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 98 (2) , 517-520
- https://doi.org/10.1002/pssa.2210980223
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Monte carlo simulation of channeling effects near the axis in siliconRadiation Effects, 1985
- Rapid computable formulas for the classical binary collision parameters ? and ?Radiation Effects, 1984
- Doping of III–V compound semiconductors by ion implantationNuclear Instruments and Methods in Physics Research, 1983
- Computer simulation of atomic-displacement cascades in solids in the binary-collision approximationPhysical Review B, 1974