Role of Hydrogen in Silicon Nitride Films Prepared by Various Deposition Techniques
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Electron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitrideApplied Physics Letters, 1988
- Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitrideApplied Physics Letters, 1987
- Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor depositionJournal of Applied Physics, 1986
- Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systemsMRS Proceedings, 1986
- Chemical and Mechanical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD SystemsMRS Proceedings, 1986
- Defect States in Silicon NitrideMRS Proceedings, 1985
- Composition and Structure Control by Source Gas Ratio in LPCVD SiN xJournal of the Electrochemical Society, 1983
- The hydrogen content of plasma-deposited silicon nitrideJournal of Applied Physics, 1978
- Reactive Plasma Deposited Si-N Films for MOS-LSI PassivationJournal of the Electrochemical Society, 1978