New technique to detect the GaAs semi-insulating surface property—cw electro-optic probing
- 27 April 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (17) , 1125-1127
- https://doi.org/10.1063/1.97937
Abstract
The continuous wave electro-optic probing (CWEOP) technique is for the first time used to probe the GaAs Czochralski liquid encapsulated semi-insulating surface property. From the second derivative profile of the signal, the space-charge boundary under different bias is clearly observed. The motion of the detected space-charge boundary with applied bias shows that the substrate surface evolves from a highly compensated semi-insulating surface to a p− surface with thermal annealing. The CWEOP experiment also concludes that there is no other level except EL2 possessing enough concentration to compensate the background shallow acceptor. Since this technique is extremely sensitive to the GaAs surface property, it can be used to directly probe the surface potential, field, and charge distribution in GaAs material and device.Keywords
This publication has 6 references indexed in Scilit:
- Computer-aided analysis of GaAs n-i-n structures with a heavily compensated i-layerIEEE Transactions on Electron Devices, 1986
- New measurement technique: cw electro-optic probing of electric fieldsApplied Physics Letters, 1986
- The roles of the surface and bulk of the semi-insulating substrate in low-frequency anomalies of GaAs integrated circuitsIEEE Transactions on Electron Devices, 1985
- Change of the surface density of the midgap level (EL2 or EL0) in bulk GaAs by heat treatments with various cappingApplied Physics Letters, 1984
- Mechanism of surface conduction in semi-insulating GaAsApplied Physics Letters, 1984
- Inhomogeneity of the deep center el2 in GaAs observed by direct infra-red imagingJournal of Electronic Materials, 1984