Influence of the number of wells in the performance of multiple quantum well intersubband infrared detectors
- 1 August 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (3) , 1062-1064
- https://doi.org/10.1063/1.351833
Abstract
We present the results of a systematic study of a series of intersubband multiple quantum well detector samples having 4, 8, 16, and 32 wells. We find that while the absorption increases with the number of wells in the device, the detector current responsivity is insensitive to the number of wells.This publication has 14 references indexed in Scilit:
- Photoconductive gain mechanism of quantum-well intersubband infrared detectorsApplied Physics Letters, 1992
- Importance of the upper state position in the performance of quantum well intersubband infrared detectorsApplied Physics Letters, 1991
- Near-unity quantum efficiency of AlGaAs/GaAs quantum well infrared detectors using a waveguide with a doubly periodic grating couplerApplied Physics Letters, 1991
- 10- mu m GaAs/AlGaAs multiquantum well scanned array infrared imaging cameraIEEE Transactions on Electron Devices, 1991
- Studies and modeling of growth uniformity in molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Large photoconductive gain in quantum well infrared photodetectorsApplied Physics Letters, 1990
- High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectorsApplied Physics Letters, 1990
- Observation of nonlinear optical rectification at 10.6 μm in compositionally asymmetrical AlGaAs multiquantum wellsApplied Physics Letters, 1989
- Intersubband emission from semiconductor superlattices excited by sequential resonant tunnelingPhysical Review Letters, 1989
- Intersubband transition in quantum wells and triple-barrier diode infrared detector conceptsSuperlattices and Microstructures, 1988