10- mu m GaAs/AlGaAs multiquantum well scanned array infrared imaging camera
- 1 May 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (5) , 1118-1123
- https://doi.org/10.1109/16.78387
Abstract
No abstract availableThis publication has 30 references indexed in Scilit:
- Dependence of the performance of GaAs/AlGaAs quantum well infrared photodetectors on doping and biasJournal of Applied Physics, 1991
- Photovoltaic GaAs quantum well infrared detectors at 4.2 μm using indirect AlxGa1−x barriersApplied Physics Letters, 1991
- Intersubband infrared absorption in a GaAs/Al0.3Ga0.7As quantum well structureApplied Physics Letters, 1990
- Inducing normally forbidden transitions within the conduction band of GaAs quantum wellsApplied Physics Letters, 1990
- Doping effects on intersubband absorption in InGaAs/InAlAs multiquantum wellsApplied Physics Letters, 1990
- Intersubband absorption and infrared modulation in GaAs/AlGaAs single quantum wellsSuperlattices and Microstructures, 1989
- High-speed measurement of the response time of a GaAs/AlxGa1−xAs multiquantum-well long-wavelength infrared detectorJournal of Applied Physics, 1989
- Intersubband absorption in strained InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wellsApplied Physics Letters, 1989
- Photovoltaic quantum well infrared detectorApplied Physics Letters, 1988
- Photovoltaic detection of infrared light in a GaAs/AlGaAs superlatticeApplied Physics Letters, 1988