On the channel-length dependence of the hot-carrier degradation of n-channel MOSFETs
- 1 December 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (12) , 553-555
- https://doi.org/10.1109/55.43137
Abstract
The channel-length dependence of lifetime plots is analyzed. It is shown that no unique tau *I/sub d/ versus I/sub sub//I/sub d/ relation can be obtained when threshold-voltage shifts are used for measuring the lifetime. In contrast, when using charge pumping as a monitor for the degradation, the lifetime plot for a given technology proves to be independent of the channel length.Keywords
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