The Microstructure of Transiently Annealed Donor Implants in GaAs
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Multiply scanned electron beam annealing of dual implants in GaAsRadiation Effects, 1983
- Incoherent annealing of implanted layers in GaAsIEEE Electron Device Letters, 1982
- Transient annealing of ion implanted GaAsMicroelectronics Journal, 1982
- Lattice Distortion and Magnetic Inhomogeneity in Fe-Ni Invar AlloyJapanese Journal of Applied Physics, 1981
- Characterisation of multiple-scan electron beam annealing methodElectronics Letters, 1980