Multiply scanned electron beam annealing of dual implants in GaAs
- 1 January 1983
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 70 (1) , 291-299
- https://doi.org/10.1080/00337578308219224
Abstract
A multiply scanned electron beam has been used to anneal dual implants of (Ga + Se) in GaAs. The implants were performed at room temperature, the dose being 9 × 1013 ions cm2 for both gallium and selenium ions. The percentage electrical activity was found to correlate with a decrease in dislocation density with increasing exposure time and majority of dislocations were perfect, interstitial loops with Burgers vectors of a/2 ⟨110⟩.Keywords
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