Multiply scanned electron beam annealing of Si implanted GaAs
- 15 February 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (4) , 334-336
- https://doi.org/10.1063/1.93088
Abstract
Low dose implants of Si into semi-insulating GaAs have been annealed by multiply scanned electron beam yielding 100% activation, without the compensation threshold characteristic of thermal annealing, and a high drift mobility of 4100 cm2/Vs for a carrier concentration of 1.6×1017 cm−3. Secondary-ion mass spectroscopy analysis has revealed that the formation of a trough, depleted of Cr in correspondence with the implanted Si, is responsible for these results.Keywords
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