High-power-density single-mode operation of GaAs-GaAlAs TJS lasers utilizing Si3N4 plasma deposition for facet coating
- 1 May 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (5) , 3743-3745
- https://doi.org/10.1063/1.326281
Abstract
A new method of laser diode facet coating, plasma deposition of Si3N4 film, has been developed. Utilizing it, laser diodes which operate at 4 mW/μm power density in single longitudinal and fundamental transverse mode for more than 1000 h have been realized.This publication has 9 references indexed in Scilit:
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