Dependence of Rocking Curve for Thin In1-xGaxAs1-yPy Layer on Thickness in a Symmetric Bragg Case
- 1 September 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (9R)
- https://doi.org/10.1143/jjap.21.1313
Abstract
The dependence of the half-width of the rocking curve and the integrated intensity for the In1-x Ga x As1-y P y epitaxial layer on its thickness is measured in the parallel arrangement [+(400), -(400)] in a symmetric Bragg case using double-crystal diffractometry. The half-width increases abruptly with decreasing thickness in the region thinner than 0.5 µm, while the intensity increases linearly with increasing thickness in a wide region from 0.1–10 µm. This dependence is explained by the dynamical diffraction theory in which the quaternary epitaxial layer is treated as a non-absorbing, thin, perfect crystal.Keywords
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