SCANNING ELECTRON BEAM DISPLAY OF DISLOCATION SPACE CHARGE
- 15 September 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (6) , 216-218
- https://doi.org/10.1063/1.1652577
Abstract
Germanium and silicon monocrystals with controlled grown‐in medium‐angle grain boundaries and crystals with isolated dislocations are subjected to a scanning electron beam (SEB) with simultaneous application of a bias field in a transversal direction. Amplification of the induced current signals and oscillographic display reveals clearly the extended space charge of defects and the junction behavior of a two‐dimensional array of edge dislocations with a radius of the space‐charge pipe from a few microns to 25 microns.Keywords
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