Light-induced effects in hydrogenated amorphous nitrogen-rich silicon nitride films
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 612-614
- https://doi.org/10.1016/0022-3093(89)90666-2
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Spatial charge distribution in as-deposited and UV-illuminated gate-quality nitrogen-rich silicon nitrideIEEE Electron Device Letters, 1989
- Electrically active point defects in amorphous silicon nitride: An illumination and charge injection studyJournal of Applied Physics, 1988
- Electron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitrideApplied Physics Letters, 1988
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981