Interface analysis by spectroscopic ellipsometry of Ga1−xAlxAs-GaAs heterojunctions grown by metal organic vapor phase epitaxy
- 1 August 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (3) , 285-287
- https://doi.org/10.1063/1.94328
Abstract
Metal organic vapor phase epitaxy (MOVPE) grown Ga1−xAlxAs‐GaAs heterostructures have been analyzed by spectroscopic ellipsometry in the 1.6–5.4‐eV region. We show that this technique is capable of a nondestructive analysis of the interface region. The method can distinguish between a physical interface (roughness, alloy clustering) and a chemical one (gradual changes in Al concentration). The results show that extremely sharp interfaces (of the order of one monolayer) can be grown by MOVPE.Keywords
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