α-SiC buried-gate junction field effect transistors
- 15 January 1992
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 11 (1) , 121-124
- https://doi.org/10.1016/0921-5107(92)90203-l
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Hall measurements as a function of temperature on monocrystalline SiC thin filmsJournal of Applied Physics, 1990
- High-transconductance beta -SiC buried-gate JFETsIEEE Transactions on Electron Devices, 1989
- Breakdown field in vapor-grown silicon carbide p-n junctionsJournal of Applied Physics, 1977
- High-field transport in wide-band-gap semiconductorsPhysical Review B, 1975
- Avalanche Breakdown in Epitaxial SiC p-n JunctionsJournal of Applied Physics, 1969
- Electron Mobility Measurements in SiC PolytypesJournal of Applied Physics, 1967