Band-tailing effects and the temperature dependence of radiative recombination in compensated epitaxial GaAs laser junctions
- 1 April 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 4 (4) , 111-113
- https://doi.org/10.1109/jqe.1968.1075060
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Photoluminescence of compensated p-type GaAsJournal of Physics and Chemistry of Solids, 1967
- Compensation and band tailing effects in high power room temperature GaAs lasersSolid State Communications, 1967
- Effect of higher absorption in non-lasing GaAs diodes at 300°KIEEE Journal of Quantum Electronics, 1966
- Absorption Edge of Impure Gallium ArsenidePhysical Review B, 1965
- Internal Quantum Efficiency of GaAs Electroluminescent DiodesJournal of Applied Physics, 1965
- Field Control of the Quantum Efficiency of Radiative Recombination in SemiconductorsPhysical Review B, 1965
- TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GaAs LASERSApplied Physics Letters, 1964
- Light emission and electrical characteristics of epitaxial GaAs lasers and tunnel diodesSolid State Communications, 1964
- The effect of temperature on the properties of GaAs laserProceedings of the IEEE, 1963
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954