Low threshold current density 1.3 µm InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy
- 5 February 2004
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 40 (3) , 179-180
- https://doi.org/10.1049/el:20040127
Abstract
InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy are reported. The laser emits 1.296 µm light output and demonstrates a very low threshold current density of 111 A/cm2. This is the lowest reported value of GaAs-based 1.3 µm quantum dot lasers with InGaP cladding layers.Keywords
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