InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy
- 28 January 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (4) , 535-537
- https://doi.org/10.1063/1.1445269
Abstract
This letter presents the lasing properties of InAs/GaAs quantum dot lasers with InGaP cladding layers grown by solid-source molecular-beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm2, an internal loss of 1.35 cm−1, and an internal quantum efficiency of 31% at room temperature. At a low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30 A/cm2 are measured.Keywords
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