Optical and Electrical Properties of Sn-doped Indium Oxide Films Deposited on Polyester by Reactive Evaporation
- 1 October 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (10R)
- https://doi.org/10.1143/jjap.37.5614
Abstract
Transparent conducting Sn-doped indium oxide (ITO) films have been prepared on polyimide (PI) thin film substrate at low substrate temperature by reactive evaporation. The structural, optical and electrical properties of the deposited films have been investigated. High quality films with resistivity as low as 7×10-4 Ω·cm and transmittance over 80% have been obtained. The temperature dependence of mobility and carrier concentration have been measured over a temperature range 10–400 K. Corresponding scattering mechanism of charge carriers in the films have been discussed.Keywords
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