Quenching of photoluminescence from Si nanocrystals caused by boron doping
- 19 February 1999
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 109 (9) , 561-565
- https://doi.org/10.1016/s0038-1098(98)00632-2
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 12 references indexed in Scilit:
- Photoluminescence from B-doped Si nanocrystalsJournal of Applied Physics, 1998
- 1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+Applied Physics Letters, 1997
- Size-dependent near-infrared photoluminescence spectra of Si nanocrystals embedded in SiO2 matricesSolid State Communications, 1997
- Doping of B atoms into Si nanocrystals prepared by rf cosputteringSolid State Communications, 1996
- Theory of radiative and nonradiative transitions for semiconductor nanocrystalsJournal of Luminescence, 1996
- Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous SiPhysical Review B, 1995
- Saturation and voltage quenching of porous-silicon luminescence and the importance of the Auger effectPhysical Review B, 1995
- Experimental proof for nanoparticle origin of photoluminescence in porous silicon layersApplied Physics Letters, 1993
- Quantum size effects on photoluminescence in ultrafine Si particlesApplied Physics Letters, 1990
- Nondestructive Determination of the Composition and Thickness of Thin Films of Pyrolytically Deposited Borosilicate Glass by Infrared AbsorptionJournal of the Electrochemical Society, 1971