Photoluminescence from B-doped Si nanocrystals
- 15 June 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (12) , 7953-7957
- https://doi.org/10.1063/1.367976
Abstract
Boron-doped Si nanocrystals as small as 3.5 nm were prepared and their photoluminescence (PL) properties were studied. The PL properties were found to be very sensitive to the B concentration. For the sample without B doping the temperature-dependent shift of the PL peak was almost the same as that of the bulk band gap. As the B concentration increased, the temperature dependence deviated from that of the bulk band gap, and the peak exhibited a low-energy shift as the temperature decreased. The anomalous temperature dependence is considered to be due to the contribution of the PL from excitons bound to the neutral B states.This publication has 18 references indexed in Scilit:
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