Preparation and Raman study of B-doped Si microcrystals
- 30 October 1996
- journal article
- Published by Elsevier in Materials Science and Engineering: A
- Vol. 217-218, 155-158
- https://doi.org/10.1016/s0921-5093(96)10303-8
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Optical properties of manganese-doped nanocrystals of ZnSPhysical Review Letters, 1994
- Low-frequency Raman scattering from small silver particles embedded inthin filmsPhysical Review B, 1991
- Growth of Ge Microcrystals in SiO2 Thin Film Matrices: A Raman and Electron Microscopic StudyJapanese Journal of Applied Physics, 1991
- Quantitative analysis of the effect of disorder-induced mode coupling on infrared absorption in silicaPhysical Review B, 1988
- Process and film characterization of low pressure tetraethylorthosilicate–borophosphosilicate glassJournal of Vacuum Science & Technology B, 1986
- Optical absorption of small metallic particlesSurface Science, 1985
- Investigation of the diffusion parameters of the borosilicate-silicon system by infrared absorptionJournal of Physics D: Applied Physics, 1975
- Effect of Free Carriers on Zone-Center Vibrational Modes in Heavily Doped-type Si. II. Optical ModesPhysical Review B, 1973
- Interaction between electronic and vibronic Raman scattering in heavily doped siliconSolid State Communications, 1973