Investigation of the diffusion parameters of the borosilicate-silicon system by infrared absorption

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Abstract
The characteristic parameters of a solid-to-solid diffusion system are investigated. The net boron concentration of the pyrolytically deposited SiO2 films used as diffusion sources is determined by infrared spectrophotometry. The data of the diffused layer in Si are used to correlate the infrared absorption spectrum with the composition of the SiO2 films. The absorption cross section of the B-O oscillator is determined. The surface concentration and junction depth of the diffused layer in the Si are determined from the infrared absorption of the SiO2 film and by the four-point probe and bevelled-edge methods.