Photoluminescence and optically detected magnetic resonance investigations on porous silicon
- 31 December 1993
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 57 (1-6) , 137-140
- https://doi.org/10.1016/0022-2313(93)90121-3
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Spin-dependent effects in porous siliconApplied Physics Letters, 1992
- Luminescent properties of visible and near-infrared emissions from porous silicon prepared by the anodization methodPhysical Review B, 1992
- Luminescence degradation in porous siliconApplied Physics Letters, 1992
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Composition and Morphology of Luminescent Porous SiMRS Proceedings, 1991
- Pore Formation and Propagation Mechanism in Porus SiliconMRS Proceedings, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- The optically detected magnetic resonance of dangling bonds at the Si/SiO2 interfaceSolid State Communications, 1986
- Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate siliconJournal of Physics C: Solid State Physics, 1984
- Explanation of light induced ESR in a-Si:H; dangling bonds with a positive correlation energyJournal of Non-Crystalline Solids, 1980