High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors

Publisher Website

26 September 2005

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 87 (14) , 143501
https://doi.org/10.1063/1.2058206

Abstract

We report on

Si O_{2} ∕ Al Ga N ∕ Ga N

metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs), which exhibit a

6.7 W ∕ mm

power density at

7 GHz

. Unpassivated and

Si O_{2}

-passivated heterostructure field-effect transistors (HFETs) were also investigated for comparison. Deposited

12 nm

thick

Si O_{2}

yielded an increase of the sheet carrier density from

7.6 \times 10^{12} to 9.2 \times 10^{12} {cm}^{- 2}

and a subsequent increase of the static drain saturation current from

0.75 to 1.09 A ∕ mm

. The small-signal rf characterization of the MOSHFETs showed an extrinsic current gain cutoff frequency

f_{T}

of

24 GHz

and a maximum frequency of oscillation

f_{\max}

of

40 GHz

. The output power of

6.7 W ∕ mm

of the MOSHFETs measured at

7 GHz

is about two times larger than that of HFETs. The results obtained demonstrate the suitability of GaN-based MOSHFETs for high-power electronics.

Keywords

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