Current status of single ion implantation
- 1 July 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (4) , 2489-2493
- https://doi.org/10.1116/1.590196
Abstract
No abstract availableKeywords
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- Development of single-ion implantation — controllability of implanted ion numberApplied Surface Science, 1997
- Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET'sIEEE Transactions on Electron Devices, 1994
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