Point defect injection into silicon due to low-temperature surface modifications
- 21 September 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (12) , 1426-1428
- https://doi.org/10.1063/1.107559
Abstract
Deep level transient spectroscopy has been applied to study the appearance of phosphorus-vacancy pairs in n-type silicon following different low-temperature surface modifications. It is established that at most 107 cm−2 vacancy is injected into the bulk of the silicon substrate during Pd2Si silicide formation. On the other hand, phosphorus-vacancies pairs are observed after electron irradiation, low energy ion bombardment, and electron gun evaporation of metal films.Keywords
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