Platinum-silicide formation during rapid thermal annealing: Dependence on substrate orientation and pre-implanted impurities
- 1 August 1991
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 53 (2) , 168-171
- https://doi.org/10.1007/bf00323878
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Electrical characteristics of PtSi formed by incoherent light annealingThin Solid Films, 1988
- Rapid Thermal Processing — A User'S PerspectiveMRS Proceedings, 1987
- Effects of substrate crystallinity and dopant on the growth kinetics of platinum silicidesJournal of Applied Physics, 1985
- Epitaxial PtSi and Pd2Si formed by rapid thermal annealingMaterials Letters, 1985
- Growth kinetics of platinum silicideJournal of Applied Physics, 1983
- The Kinetics of Platinum Silicide Formation Using CW Lamp AnnealingMRS Proceedings, 1983
- The oxygen effect in the growth kinetics of platinum silicidesJournal of Applied Physics, 1981
- Growth rates for Pt2Si and PtSi formation under UHV and controlled impurity atmospheresApplied Physics Letters, 1980
- Pt2Si and PtSi formation with high-purity Pt thin filmsApplied Physics Letters, 1977
- Influence of the nature of the Si substrate on nickel silicide formed from thin Ni filmsThin Solid Films, 1976