The Kinetics of Platinum Silicide Formation Using CW Lamp Annealing
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Growth kinetics of platinum silicideJournal of Applied Physics, 1983
- Short Time AnnealingJournal of the Electrochemical Society, 1983
- Activation of arsenic-implanted silicon using an incoherent light sourceApplied Physics Letters, 1981
- Heat-pulse annealing of arsenic-implanted silicon with a CW arc lampIEEE Electron Device Letters, 1981
- Radiation Annealing of Boron-Implanted Silicon with a Halogen LampJapanese Journal of Applied Physics, 1980
- Growth rates for Pt2Si and PtSi formation under UHV and controlled impurity atmospheresApplied Physics Letters, 1980
- Pt2Si and PtSi formation with high-purity Pt thin filmsApplied Physics Letters, 1977
- LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUMApplied Physics Letters, 1971