Infrared interference spectra observed in silicon epitaxial wafers
- 31 August 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (8) , 771-781
- https://doi.org/10.1016/0038-1101(66)90117-1
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Determination of Epitaxial-Layer Impurity Distribution by Neutron Activation MethodJapanese Journal of Applied Physics, 1965
- Interference Phenomena observed in the Infrared Spectrograms of Silicon and Germanium Single Crystal Wafers (Part 2)Journal of the Spectroscopical Society of Japan, 1963
- Thickness Measurement of Epitaxial Films by the Infrared Interference MethodJournal of the Electrochemical Society, 1962
- Impurity Distribution in Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1962
- Anomalous Impurity Diffusion in Epitaxial Silicon near the SubstrateJournal of the Electrochemical Society, 1962
- The Diffusivity of Arsenic in SiliconJournal of the Electrochemical Society, 1962
- Interference Method for Measuring the Thickness of Epitaxially Grown FilmsJournal of Applied Physics, 1961
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957