Wannier excitons in low-dimensional microstructures: Shape dependence of the quantum size effect
- 15 December 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (23) , 13085-13088
- https://doi.org/10.1103/physrevb.44.13085
Abstract
The shape dependence of the quantum size effect of the Wannier exciton is clarified by a simple variational calculation for a model of microcrystal with cylindrical shape. According to the change of the ratio of the radius of the section and the length of the cylinder to the effective Bohr radius of the exciton, the motional state of the exciton changes from three-dimensional to quasi-two-, one-, and zero-dimensional. It is shown that when there is a large anisotropy in the shape of the microstructure, the spatial extension of the exciton wave function along the relatively free coordinate shrinks from the bulk value, reflecting the low dimensionality due to the strong confinement along the axis perpendicular to it.Keywords
This publication has 19 references indexed in Scilit:
- Single quantum wire semiconductor lasersApplied Physics Letters, 1989
- Rapid radiative decay and enhanced optical nonlinearity of excitons in a quantum wellPhysical Review B, 1988
- Carrier confinement potential in quantum-well wires fabricated by implantation-enhanced interdiffusion in the GaAs-As systemPhysical Review B, 1987
- Theory of the linear and nonlinear optical properties of semiconductor microcrystallitesPhysical Review B, 1987
- Light Emission from Quantum-Box Structure by Current InjectionJapanese Journal of Applied Physics, 1987
- Low-temperature photoluminescence from InGaAs/InP quantum wires and boxesApplied Physics Letters, 1987
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxesApplied Physics Letters, 1986
- Toward quantum well wires: Fabrication and optical propertiesApplied Physics Letters, 1982
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974