Residual stresses in DLC/Si and Au/Si systems: Application of a stress-relaxation model to the nanoindentation technique
- 1 April 2002
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 17 (4) , 901-906
- https://doi.org/10.1557/jmr.2002.0131
Abstract
Residual stress in a thin film was analyzed by the nanoindentation technique. Two dominant effects of residual stress to indentation were summarized as the slope change in loading curve and the invariant value of intrinsic hardness. A stress-sensitive reversibly deformed zone around contact was modeled to explain the indentation behaviors under a residually stressed state. Finally, the residual stress was evaluated from the changes in contact shape and applied load during stress relaxation under the condition of constant indentation depth. The residual stresses in diamond-like carbon and Au films analyzed from this model agreed well with the average values measured by the curvature method.Keywords
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