Residual stress measurements of thin aluminum metallizations by continuous indentation and x-ray stress measurement techniques
- 1 October 1991
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 6 (10) , 2084-2090
- https://doi.org/10.1557/jmr.1991.2084
Abstract
Stress relaxation in aluminum films of several thicknesses was characterized by using both continuous indentation and x-ray diffraction techniques. Results of the indentation and x-ray stress measurements compare closely for films of small thicknesses. Indentation data from thicker films do not compare well to the x-ray data due to the presence of a residual stress distribution.Keywords
This publication has 12 references indexed in Scilit:
- Stress relaxation of passivated aluminum line metallizations on silicon substratesJournal of Applied Physics, 1991
- Stress relaxation of continuous film and narrow line metallizations of aluminum on silicon substratesScripta Metallurgica et Materialia, 1990
- Indentation load relaxation experiments with indentation depth in the submicron rangeJournal of Materials Research, 1990
- X-ray determination of the residual stresses in thin aluminum films deposited on silicon substratesScripta Metallurgica, 1989
- An investigation of hardness and adhesion of sputter-deposited aluminum on silicon by utilizing a continuous indentation testJournal of Materials Research, 1988
- Measurement and Interpretation of stress in aluminum-based metallization as a function of thermal historyIEEE Transactions on Electron Devices, 1987
- Plastic properties of thin films on substrates as measured by submicron indentation hardness and substrate curvature techniquesJournal of Materials Research, 1986
- A method for interpreting the data from depth-sensing indentation instrumentsJournal of Materials Research, 1986
- A note on the influence of residual stress on measured hardnessThe Journal of Strain Analysis for Engineering Design, 1984
- Mechanical Strength of Thin Films of MetalsPhysical Review B, 1955