Measurement and Interpretation of stress in aluminum-based metallization as a function of thermal history
- 1 March 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (3) , 689-699
- https://doi.org/10.1109/t-ed.1987.22981
Abstract
Mechanical stress in interconnections is a problem of growing importance in VLSI devices. The origins of this stress are discussed, and a measurement technique based on the determination of wafer curvature with a laser scanning device is described. The changes in stress observed during thermal cycles are interpreted quantitatively in terms of a simple model of elastic and plastic strain in the metal. The effects of changes in deposition conditions, film composition, and film structure are discussed.This publication has 8 references indexed in Scilit:
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